• Fumiaki N Ishikawa, Hsiao-Kang Chang, Koungmin Ryu, Po-Chiang Chen, Alexander Badmaev, Lewis Gomez De Arco, Guozhen Shen, and Chongwu Zhou.
• Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, USA.
• ACS Nano. 2009 Jan 27; 3 (1): 73-9.

AbstractWe report high-performance fully transparent thin-film transistors (TTFTs) on both rigid and flexible substrates with transfer printed aligned nanotubes as the active channel and indium-tin oxide as the source, drain, and gate electrodes. Such transistors have been fabricated through low-temperature processing, which allowed device fabrication even on flexible substrates. Transparent transistors with high effective mobilities (approximately 1300 cm(2) V(-1) s(-1)) were first demonstrated on glass substrates via engineering of the source and drain contacts, and high on/off ratio (3 x 10(4)) was achieved using electrical breakdown. In addition, flexible TTFTs with good transparency were also fabricated and successfully operated under bending up to 120 degrees . All of the devices showed good transparency (approximately 80% on average). The transparent transistors were further utilized to construct a fully transparent and flexible logic inverter on a plastic substrate and also used to control commercial GaN light-emitting diodes (LEDs) with light intensity modulation of 10(3). Our results suggest that aligned nanotubes have great potential to work as building blocks for future transparent electronics.

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